Static information storage and retrieval – Powering
Patent
1998-01-08
1998-12-29
Nguyen, Viet Q.
Static information storage and retrieval
Powering
323313, 365227, 365194, H01L 2100
Patent
active
058547681
ABSTRACT:
A DRAM includes first to third voltage lowering circuits for lowering a power supply voltage supplied from the exterior and supplying the lowered voltage to an internal circuit. The first to third voltage lowering circuits are separately provided. The first voltage lowering circuit is a feedback type circuit having a P-channel MOS transistor. The first voltage lowering circuit is an exclusive circuit for creating a first potential by lowering the power supply voltage supplied from the exterior and supplying a thus created lowered power supply voltage to a RAS signal input buffer, CAS signal input buffer and WE signal input buffer. The second voltage lowering circuit is a feedback type circuit having a P-channel MOS transistor or source follower type circuit having an N-channel MOS transistor. The second voltage lowering circuit is an exclusive circuit for creating a second potential by lowering the power supply voltage supplied from the exterior and supplying a thus created lowered power supply voltage to a V.sub.BL generating circuit for generating a bit line precharge potential and a V.sub.PL generating circuit for generating a cell plate potential. The third voltage lowering circuit is a source follower type circuit having an N-channel MOS transistor.
REFERENCES:
patent: 5450361 (1995-09-01), Iwahashi et al.
patent: 5526313 (1996-06-01), Etoh et al.
patent: 5619446 (1997-04-01), Yoneda
patent: 5650970 (1997-07-01), Kai
patent: 5654577 (1997-08-01), Nakamura et al.
patent: 5751639 (1998-05-01), Ohsawa
1986 IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp. 272 and 273, Furuyama et al., "An Experimental 4Mb CMOS DRAM."
Kabushiki Kaisha Toshiba
Nguyen Viet Q.
LandOfFree
DRAM having a power supply voltage lowering circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with DRAM having a power supply voltage lowering circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DRAM having a power supply voltage lowering circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1428614