DRAM device with function of producing wordline drive signal bas

Details DRAM device with function of producing wordline drive signal bas DRAM device with function of producing wordline drive signal bas

1998-02-26

2000-06-13

Mai, Son

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

36518909, G11C 800

Patent

active

060757469

ABSTRACT:
A DRAM device includes plural cell arrays two-dimensionally arranged in column and row directions. A wordline driving section has a drive transistor in each row for transferring a charge to a corresponding cell in the plural cell arrays by raising a voltage on a wordline selected by a plural stage decode method. A first generating section generates a drive signal for driving a wordline which is supplied to the drive transistor, based on a stored charge in a capacitor. A second generating section generates a control signal for controlling the gate of the drive transistor in a chip of the DRAM device by a charge pump circuit.

REFERENCES:
patent: 5612924 (1997-03-01), Miyamoto
patent: 5619162 (1997-04-01), Ogihara
patent: 5673229 (1997-09-01), Okamura et al.
patent: 5706245 (1998-01-01), Kim
patent: 5761135 (1998-06-01), Lee
patent: 5825714 (1998-10-01), Kohno

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