DRAM capacitors made from silicon-germanium and electrode-limite

Details DRAM capacitors made from silicon-germanium and electrode-limite DRAM capacitors made from silicon-germanium and electrode-limite

1996-07-11

1999-07-27

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361311, 361313, 3613215, H01G 4008, H01G 406

Patent

active

059301066

ABSTRACT:
An exemplary implementation of the present invention includes a capacitor for a dynamic random access memory cell having a first plate; a second plate; and a dielectric layer interposed between said first and second plates, with the dielectric layer being dominated by electrode-limited conduction, which includes tantalum pentoxide and silicon nitride, or a combination of the two. In a preferred implementation, one of the two capacitor plates is formed from a silicon-germanium layer, the second plate is formed from a metal and the dielectric layer is formed from tantalum pentoxide.

REFERENCES:
patent: 4961165 (1990-10-01), Ema
patent: 5130885 (1992-07-01), Fazan et al.
patent: 5138411 (1992-08-01), Sandhu
patent: 5140389 (1992-08-01), Kimura et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5396093 (1995-03-01), Lu
Three Dimensional Leakage Current in Corrugated Capacitor Cells--Extended abstracts of the 17th conference on solid State Devices and Materials, Tokyo, 1985, pp. 37-40.
Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed Diodes Japanese Journal of Applied Physics, vol. 21, No. 11, Nov. 1982 pp. 1559-1565.
A Large Barrier Height Schottky Contact Between Amorphous Si--Ge--B and GaAs Japanese Journal of Applied Physics, vol. 22, Nov., 1983, pp. L709-L711.

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