Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2006-08-08
2006-08-08
Mai, Son (Department: 2827)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S189070, C365S210130
Reexamination Certificate
active
07088603
ABSTRACT:
A CAM device combines a folded bit line architecture with a standard six transistor DRAM based CAM cell and includes a sensing scheme where the active and reference bit lines being sensed are each from the same memory array of the CAM device. Noise present in one array therefore appears as common mode noise in both the active and reference bit lines, thereby permitting the sensing operation to be performed accurately even in the presence of increased noise.
REFERENCES:
patent: 5319589 (1994-06-01), Yamagata et al.
patent: 5475825 (1995-12-01), Yonezawa et al.
patent: 5936873 (1999-08-01), Kongetira
patent: 6442054 (2002-08-01), Evans et al.
patent: 6744653 (2004-06-01), Huang
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