DRAM applications using vertical MISFET devices

Details DRAM applications using vertical MISFET devices DRAM applications using vertical MISFET devices

1996-06-17

1999-06-22

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257301, 257306, 257195, 257200, 257201, H01L 310328, H01L 310330, H01L 31072, H01L 3110

Patent

active

059145048

ABSTRACT:
The present invention relates to RAM circuits comprising memory cells and logic circuitry wherein each of the memory cells comprise at least one Vertical MISFET device comprising a stack of several layers a source layer, a channel layer, a drain layer and a capacitor on the top of the stack of several layers of the Vertical MISFET device.

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patent: 5414655 (1995-05-01), Ozaki et al.
patent: 5497017 (1996-03-01), Gonzales
"Fabrication of Three-Terminal Resonant Tunneling Devices in Silicon-Based Material," Zaslavsky, et al., Appl. Phys. Lett. 64 (13), pp. 1699-1701, Mar. 28, 1994.
"Ballistic Metal-Oxide-Semiconductor Field Effect Transistor," Natori, K., J. Appl. Phys. 76 (8), pp. 4879-4890, Oct. 15, 1994.
"The Physics and Device Applications of Epitaxially Grown Si and Si.sub.1-x Ge.sub.x Heterostructures," Kearney, M.J., GEC Journal of Research, vol. 10, No. 3, pp. 158-165, 1993.
"The Physics and Device Applications of Epitaxially Grown Si and Si.sub.1-x Ge.sub.x Heterostructures" M.J. Kearney, The GEC Journal of Research, vol. 10, No. 3, pp. 150-165, 1993.

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