Drain extensions for closed COS/MOS logic devices

Details Drain extensions for closed COS/MOS logic devices Drain extensions for closed COS/MOS logic devices

1978-04-03

1979-02-27

Miller, Jr., Stanley D.

357 41, 357 46, 357 89, H01L 2978

Patent

active

041421973

ABSTRACT:
A drain extension which is employed with complementary symmetry metal-oxide semiconductor (COS/MOS) devices which are constructed with a closed geometry gate structure. This drain extension of closed geometry gate structures includes lightly doped regions which surround contacts and heavily doped regions in the areas between concentric gates where there are no contacts.

REFERENCES:
patent: 3345216 (1967-10-01), Rogers
patent: 3434021 (1969-03-01), Hofstein
Krick et al., "Integratable, Symmetrical, High-Voltage MOSFET Structure," IBM Technical Disclosure Bulletin, vol. No. 6, Nov. 1972, pp. 1884-1885.

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