Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-01-02
2007-01-02
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S379000
Reexamination Certificate
active
11047245
ABSTRACT:
Multi-capacitor drain extended transistor devices and methods are provided. A first capacitor structure comprises a first dielectric layer (14) and a first gate layer (16) and first and second lateral sides. The first capacitor structure overlies a channel region of a first conductivity type in a semiconductor substrate (4). A second capacitor structure comprising a second dielectric layer (26) and a second gate layer (28) is formed overlying the first gate structure. A source region (22) of a second conductivity type formed in the semiconductor substrate (6) proximate the first lateral side of the gate and a drain extension region/well (12) lightly doped of the second conductivity type is formed in the semiconductor substrate under a portion of the gate structure. A drain region (24) of the second conductivity type formed within the drain extension region (12). The first capacitor structure and the second capacitor structure connect in series to permit a higher operational gate voltage. Other systems and methods are disclosed.
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Mitros Jozef
Oberhuber Ralph
Brady W. James
Keagy Rose Alyssa
Nguyen Cuong
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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