Drain-biassed transresistance device for continuous time filters

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

328127, 328167, 330109, 330294, 330305, 307568, H03B 100, H03K 500

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active

049183389

ABSTRACT:
A tunable drain-biased transresistance (DBT) device for generating accurate linearly variable RC values employs first and second matched MOS transistors connected in first and second series circuits with third and fourth matched MOS transistors, respectively, across the terminals of a source of supply voltage. A differential amplifier has first and second input terminals connected to respective drain electrodes of the first and second MOS transistors and an output coupled via a feedback circuit to at least one of its input terminals. A pair of signal input terminals are connected to the gate electrodes of the first and second transistors so that said input terminals operate into a high impedance. A source of adjustable bias voltage (V.sub.B) is connected in common to the gate electrodes of the third and fourth transistors thereby to supply adjustable bias currents (I.sub.B) to the drain electrodes of the first and second transistors so as to bias these transistors into their triode regions. The tunable DBT device thereby exhibits a wide dynamic linear input range. The resistance of the device is adjustable in a linear manner by controlling the drain voltage of the first and second transistors by adjustment of the bias current (I.sub.B).

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Banu et al., "Detailed Analysis of Nonidealities in MOS Fully Integrated Active RC Filters . . . ", IEEE Proceedings, vol. 131, No. 5, 10/84, pp. 190-196.
Tsividis et al., "Continuous-Time MOSFET-C Filters in VLSI", IEEE J. Solid-State Circuits, vol.-SC-21, No. 1, 2/86, pp. 15-29.

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