Drail-well/extension high voltage MOS transistor structure and m

Details Drail-well/extension high voltage MOS transistor structure and m Drail-well/extension high voltage MOS transistor structure and m

1988-06-16

1990-12-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 34, 437 41, 437 57, 357 233, 357 44, H01L 21265

Patent

active

049786288

ABSTRACT:
A high-voltage MOS transistor structure and the manner of its fabrication are disclosed. The transistor structure is fabricated at the surface of a semiconductor layer or substrate where the structure includes first and second regions provided at the surface spaced apart from one another by an intervening portion of the semiconductor layer. The first and second regions are of a predetermined conductivity type. A third region is provided in the semiconductor layer adjacent the first region. The third region extends from the first region partially across the intervening portion of the semiconductor layer at the substrate surface toward to second region and then extends into the semiconductor layer under the first region. A channel is thus defined between the third region and the second region. The channel interface junction of third region defines an arc curving under the first region. The third region is also of the predetermined conductivity.

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