Downhole uses of pressure-tuned semiconductor light sources

Optics: measuring and testing – By light interference – Having light beams of different frequencies

Reexamination Certificate

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Reexamination Certificate

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07817285

ABSTRACT:
An instrument for use in a borehole, the instrument including a pressure tuned light source disposed in a housing adapted for insertion into the borehole.

REFERENCES:
patent: 4664196 (1987-05-01), Manke
patent: 6016702 (2000-01-01), Maron
patent: 6486958 (2002-11-01), Szafraniec et al.
patent: 6693848 (2004-02-01), Ambs et al.
patent: 7196786 (2007-03-01), DiFoggio
patent: 2005/0007583 (2005-01-01), DiFoggio
patent: 2005/0269499 (2005-12-01), Jones et al.
patent: 2007/0159625 (2007-07-01), DiFoggio
Wippich et al., “Tunable Lasers and Fiber-Bragg-Grating Sensors.” The industrial Physicist, p. 24-27 Jun./Jul. 2003), p. 24-25.
Chapin, “Gravity instruments: Past, present, future”, The Leading Edge, 100-112, Jan. 1998. pp. 102-104.
International Search Report for International Application No. PCT/US 08/79493. Mailed May 27, 2009.
Written Opinion of the International Searching Authority for International Application No. PCT/US 08/79493. Mailed May 27, 2009.
F. Dybala, et al. “Tunable laser in 1575 nm-1255 nm range achieved by pressure tuning combined with grating tuning”. phys.stat. sol. (b) 244, No. 1, 219-223 (2007)/DOI 10.1002/pssb.200672578.
Pawel Adamiec, et al. “Pressure tuning of high-power laser diodes”. Proceedings of SPIE. vol. 4973 (2003). pp. 158-165.
P. Adamiec, et al. “Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range”. Applied Physics Letters. vol. 85, No. 19. Nov. 8, 2004. pp. 4292-4294.
Benjamin Welber, et al. “Dependence of the direct energy gap of GaAs on hydrostatic pressure”. Physical Review B. vol. 12, No. 12. Dec. 15, 1975. pp. 5729-5738.
P. Stepinski, et al. “Pressure Tuned Laser Diode as a Light Source for Characterization of Optical Transmission Lines”. ICTON 2000. pp. 103-106.
T. Suski, et al. “A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal”. Applied Physical Letters. vol. 84, No. 8. Feb. 23, 2004. pp. 1236-1238.
F. Dybala, et al. “Wavelength Tuning of InGaAs/GaAs Laser Diodes by the Application of High Hydrostatic Pressure”. ICTON 2002 pp. 93-97.
W. Trzeciakowski, et al. “Pressure and temperature tuning of laser diodes”. phys. stat. sol. (b) 244, No. 1, 179-186 (2007)/DOI 10.1002/pssb/200672508.
S.J. Sweeney, et al. “Improved temperature dependence of 1.3 um AlGaInAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure”. Electronics Letters. Oct. 29, 1998. vol. 34, No. 22. pp. 2130-2132.
V.B. Anzin, et al. “Application of Pressure-Tuned Diode Lasers to High-Resolution Spectroscopy”. Appl. Phys. 22, 241-243 (1980).

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