Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-02-23
2010-06-29
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S090000, C257S093000, C257S096000, C257S097000, C257S103000, C257SE33025
Reexamination Certificate
active
07745839
ABSTRACT:
Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1and D2as two light emitting elements having different wavelengths are integrally formed on a common substrate1. A semiconductor laminate A is deposited on an n-type contact layer21in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode12formed between the semiconductor lasers D1and D2is shared by the semiconductor lasers D1and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.
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Nakahara Ken
Tamai Shinichi
Yamaguchi Atsushi
Ngo Ngan
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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