Double wafer carrier process for creating integrated circuit...

Details Double wafer carrier process for creating integrated circuit... Double wafer carrier process for creating integrated circuit...

2011-06-14

2011-06-14

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23145, C257SE23169, C257SE23145

Reexamination Certificate

active

07960840

ABSTRACT:
A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.

REFERENCES:
patent: 7276799 (2007-10-01), Lee et al.
patent: 2006/0043599 (2006-03-01), Akram et al.

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