Double sided semiconduction device with edge contact and...

Details Double sided semiconduction device with edge contact and... Double sided semiconduction device with edge contact and...

2011-05-17

2011-05-17

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257SE23085, C257SE23063, C257SE23071, C257SE29013, C257SE29027, C257SE29271, C257S723000, C257S777000, C257S328000, C257S329000, C257S335000, C257S336000, C257S489000, C257S492000, C257S341000, C257S288000, C257S339000, C257S408000, C257S139000, C257S342000, C257S345000, C257S378000, C257S401000, C257S476000, C257S486000

Reexamination Certificate

active

07944035

ABSTRACT:
A semiconductor die has devices such as MOSgated devices, diodes and the like formed into the top and bottom surfaces of the die. One terminal of each of the devices terminal in the interior center of the die and a common contact is made to the interior center of the die at one edge of the die. Various packages for the die having a reduced foot print on a support substrate are disclosed.

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