Double-sided integrated circuit chips

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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Details

C438S622000, C438S624000, C257SE25027

Reexamination Certificate

active

07989312

ABSTRACT:
A semiconductor structure and method of fabricating the structure. The method includes removing the backside silicon from two silicon-on-insulator wafers having devices fabricated therein and bonding them back to back utilizing the buried oxide layers. Contacts are then formed in the upper wafer to devices in the lower wafer and wiring levels are formed on the upper wafer. The lower wafer may include wiring levels. The lower wafer may include landing pads for the contacts. Contacts to the silicon layer of the lower wafer may be silicided.

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