Double-sided extended drain field effect transistor, and...

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S543000

Reexamination Certificate

active

06867640

ABSTRACT:
An integrated overvoltage and reverse voltage protection circuit that includes two p-channel double-sided extended drain transistors coupled to a high voltage source, each having their n-well coupled through a resistor to the high voltage source. For voltage regulation, a voltage divider is coupled in series with a first of these transistors, while the drain of the second transistor is coupled to the gate of the first transistor. For voltage blocking, the voltage divider may span the entire supply voltage. An n-channel transistor couples the second p-channel transistor to a low voltage source. A middle node in the voltage divider is coupled to one input of a comparator, with a reference voltage coupled to the second input. The comparator output drives the gate terminal of the n-channel transistor. A load to be protected may be disposed in parallel with the voltage divider.

REFERENCES:
patent: 5162883 (1992-11-01), Fujihira
patent: 5498554 (1996-03-01), Mei
patent: 5501994 (1996-03-01), Mei
patent: 5517379 (1996-05-01), Williams et al.
patent: 5539610 (1996-07-01), Williams et al.
patent: 5548147 (1996-08-01), Mei
patent: 5585660 (1996-12-01), Mei
patent: 5629542 (1997-05-01), Sakamoto et al.
patent: 5757600 (1998-05-01), Kiraly
patent: 5781390 (1998-07-01), Notaro et al.
patent: 5939863 (1999-08-01), Miller
patent: 6043965 (2000-03-01), Hazelton et al.
patent: 6229290 (2001-05-01), Nguyen et al.
patent: 6312996 (2001-11-01), Sogo
patent: 6690147 (2004-02-01), Bonto
patent: 20030020444 (2003-01-01), Kamenicky
patent: 20040140845 (2004-07-01), Eberlein

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Double-sided extended drain field effect transistor, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double-sided extended drain field effect transistor, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double-sided extended drain field effect transistor, and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3411832

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.