Double-sided cooling isolated packaged power semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

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C257S688000

Reexamination Certificate

active

07005734

ABSTRACT:
A power device includes a semiconductor die having an upper surface and a lower surface. One or more terminals are coupled to the die. A first substrate is bonded to the upper surface of the die. The first substrate is configured to provide a first heat dissipation path. A second substrate is bonded to the lower surface of the die. The second substrate is configured to provide a second heat dissipation path.

REFERENCES:
patent: 6490161 (2002-12-01), Johnson
patent: 6693350 (2004-02-01), Teshima et al.
patent: 6804883 (2004-10-01), Weiblen et al.
patent: 2002/0043708 (2002-04-01), Muto et al.

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