Double self-aligned metal oxide TFT

Details Double self-aligned metal oxide TFT Double self-aligned metal oxide TFT

2011-07-12

2011-07-12

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S160000, C257SE21414

Reexamination Certificate

active

07977151

ABSTRACT:
A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

REFERENCES:
patent: 5721164 (1998-02-01), Wu
patent: 6380009 (2002-04-01), Battersby
patent: 6913944 (2005-07-01), Hirai

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