Double self-aligned fabrication process for making a bipolar tra

Details Double self-aligned fabrication process for making a bipolar tra Double self-aligned fabrication process for making a bipolar tra

1983-07-25

1984-11-20

Weisstuch, Aaron

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148188, 29578, 357 34, H01L 21225

Patent

active

044837267

ABSTRACT:
A bipolar transistor device is disclosed having a structure wherein a layer of insulating material extends over and covers the structure substrate up to the region of the extrinsic base around the emitter. A very small area conductive base contact is provided to the extrinsic base, and a protective wall of insulating material is located on the sidewall of the base contact to isolate it from the emitter contact. This structure is made possible by a fabrication process incorporating a double-self-alignment technique wherein the base is self-aligned to a window in the insulating material and the emitter is self-aligned to the base.

REFERENCES:
patent: 3676230 (1972-07-01), Rice
patent: 4157269 (1979-06-01), Ning et al.
patent: 4319932 (1982-03-01), Jambotkar
patent: 4358326 (1982-11-01), Doo

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