Double Schottky-gate field effect transistor

Details Double Schottky-gate field effect transistor Double Schottky-gate field effect transistor

1985-08-21

1987-11-24

Edlow, Martin H.

357 15, 357 55, 357 90, H01L 2980

Patent

active

047092513

ABSTRACT:
A Schottky-gate field effect transistor comprises a semi-insulative semiconductor substrate, an active layer formed on one surface of the substrate, a source electrode and a drain electrode on the active layer in ohmic contact thereto, respectively, a first Schottky gate electrode on the active layer between the source and drain electrodes, and a second Schottky gate electrode on the active layer between the drain electrode and the first gate electrode. A portion of the active layer underneath the second gate electrode has a sheet resistance smaller than that of the active layer portion underneath the first gate electrode. The source electrode and the second electrode is electrically interconnected by connection means formed on the substrate.

REFERENCES:
patent: 2967985 (1961-01-01), Shockley et al.
patent: 4160259 (1979-07-01), Nishizawa
patent: 4163984 (1979-08-01), Pucel
patent: 4537654 (1985-08-01), Berenz et al.

Affiliated with

Also associated with

Rating

Double Schottky-gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double Schottky-gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double Schottky-gate field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2424881