Coating processes – Electrical product produced – Condenser or capacitor
Patent
1980-06-30
1983-07-19
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
427 89, 427 94, 156644, 156653, 156657, H01L 2136
Patent
active
043944060
ABSTRACT:
A contact structure in a double polysilicon device is described in which direct shorts between overlying polysilicon conductors due to a "polysilicon void phenomenon" is overcome by patterning an appropriate etch stop between the conductors.
REFERENCES:
patent: 3479237 (1969-11-01), Bersh et al.
patent: 4251571 (1982-02-01), Garbarino et al.
Bassous et al., "Method of Fabricating High-Performance IGFET Structures with Highly Controllable Submicron Effective Channel Lengths", IBM Tech. Disclosure Bulletin, vol. 21, No. 12, May 1979, pp. 5035-5038.
Revitz et al., "A Failure Mechanism in Silicon Gate Structures," Electrochemical Society Meeting, Los Angeles, Calif., Oct. 14-19, 1979, pp. 1427-1428.
Gardiner James R
Makarewicz Stanley R.
Revitz Martin
Shepard Joseph F.
DeBruin Wesley
International Business Machines Corp.
Plantz Bernard F.
Smith John D.
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