1982-12-20
1984-03-13
Edlow, Martin H.
357 54, 357 65, 357 71, H01L 2904, H01L 2934, H01L 2348, H01L 2946
Patent
active
044371080
ABSTRACT:
A contact structure in a double polysilicon device is described in which direct shorts between overlying polysilicon conductors due to a "polysilicon void phenomenon" is overcome by patterning an appropriate etch stop between the conductors.
REFERENCES:
patent: 3764423 (1973-10-01), Hauser et al.
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 4262399 (1981-04-01), Cady
patent: 4322881 (1982-04-01), Enomoto et al.
Gardiner James R.
Makarewicz Stanley R.
Revitz Martin
Shepard Joseph F.
Badgett J. L.
DeBruin Wesley
Edlow Martin H.
International Business Machines - Corporation
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