Double polysilicon bipolar transistor and method of...

Details Double polysilicon bipolar transistor and method of... Double polysilicon bipolar transistor and method of...

2005-08-30

2005-08-30

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S312000, C438S361000

Reexamination Certificate

active

06936519

ABSTRACT:
A bipolar transistor, and manufacturing method therefor, with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and spaced from the emitter structure. A dielectric layer is deposited over the substrate and connections are formed to the extrinsic base structure, the emitter structure and the collector region.

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D.L. Harame, H.H. Comfort, J.D. Cressler, E.F. Crabbé, J. Y.-C. Sun, B.S. Meyerson, and T. Tice, “Si/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits”, IEEE Transactions on Electronic Devices, vol. 42, No. 3, pp. 455-468, Mar. 1995.
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