Double polysilicon bipolar transistor

Details Double polysilicon bipolar transistor Double polysilicon bipolar transistor

2007-09-11

2007-09-11

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S575000, C257S592000, C257SE27053

Reexamination Certificate

active

11057259

ABSTRACT:
A bipolar transistor with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and spaced from the emitter structure. A dielectric layer is deposited over the substrate and connections are formed to the extrinsic base structure, the emitter structure and the collector region.

REFERENCES:
patent: 5773350 (1998-06-01), Herbert et al.

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