Double poly split gate PMOS flash memory cell

Details Double poly split gate PMOS flash memory cell Double poly split gate PMOS flash memory cell

1995-12-07

1998-01-06

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518519, 36518526, 36518529, 36518533, 365218, G11C 1134, G11C 700

Patent

active

057062277

ABSTRACT:
A P-channel MOS memory cell has P+ source and drain regions formed in an N-well. A thin tunnel oxide is provided between the well surface and an overlying floating gate. In one embodiment, the thin tunnel oxide extends over a substantial portion of the active region and the device. An overlying select and control gate is insulated from the floating gate by an insulating layer. The select and control gate including an elongated extension portion for preventing overprogramming of the circuit. The device is programmed via hot electron injection from the drain end of the channel region to the floating gate, without avalanche breakdown, which allows the cell to be bit-selectable during programming. Erasing is accomplished by electron tunneling from the floating gate to the N-well with the source, drain, and N-well regions equally biased. Since there is no high drain/well junction bias voltage, the channel length of the cell may be reduced without incurring and destructive junction stress.

REFERENCES:
patent: 4412310 (1983-10-01), Korsh et al.
patent: 4816883 (1989-03-01), Baldi
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5168465 (1992-12-01), Harari
patent: 5280446 (1994-01-01), Ma et al.
patent: 5321287 (1994-06-01), Uemura et al.
patent: 5402371 (1995-03-01), Ono
patent: 5455792 (1995-10-01), Yi

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