Radiant energy – Ion generation – Electron bombardment type
Reexamination Certificate
2011-05-24
2011-05-24
Nguyen, Kiet T (Department: 2881)
Radiant energy
Ion generation
Electron bombardment type
C250S42300F
Reexamination Certificate
active
07947966
ABSTRACT:
An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma.
REFERENCES:
patent: 5083061 (1992-01-01), Koshiishi et al.
patent: 5296713 (1994-03-01), Tanaka
patent: 5306921 (1994-04-01), Tanaka et al.
patent: 5497006 (1996-03-01), Sferlazzo et al.
patent: 5661308 (1997-08-01), Benveniste et al.
patent: 6686595 (2004-02-01), Horsky
patent: 7022999 (2006-04-01), Horsky et al.
patent: 7498592 (2009-03-01), Hershkowitz et al.
patent: 2006/0169915 (2006-08-01), Olson et al.
Axcelis Technologies Inc.
Eschweiler & Associates LLC
Nguyen Kiet T
LandOfFree
Double plasma ion source does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Double plasma ion source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double plasma ion source will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2675150