Double mask hermetic passivation structure

Details Double mask hermetic passivation structure Double mask hermetic passivation structure

1996-10-28

1997-12-16

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

257760, 257635, 257529, 257665, H01L 2934

Patent

active

056988940

ABSTRACT:
A passivation structure is formed using two passivation layers and a protective overcoat layer using two masking steps. The first passivation layer is formed over the wafer and openings are provided to expose portions of the pads for testing the device and fusible links. After testing and laser repair, a second passivation layer is formed over the wafer followed a deposit of the protective overcoat. The protective overcoat is patterned and etched, exposing the pads. The remaining portions of the protective overcoat are used as a mask to remove portions of the second passivation layer overlying the pads. Leads are then attached to pads and the devices are encapsulated for packaging.

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