Double mask hermetic passivation structure

Details Double mask hermetic passivation structure Double mask hermetic passivation structure

1996-05-22

1997-12-16

Niebling, John

Fishing, trapping, and vermin destroying

437 51, 437922, H01L 2166

Patent

active

056984561

ABSTRACT:
A passivation structure is formed using two passivation layers and a protective overcoat layer using two masking steps. The first passivation layer is formed over the wafer and openings are provided to expose portions of the pads for testing the device and fusible links. After testing and laser repair, a second passivation layer is formed over the wafer followed a deposit of the protective overcoat. The protective overcoat is patterned and etched, exposing the pads. The remaining portions of the protective overcoat are used as a mask to remove portions of the second passivation layer overlying the pads. Leads are then attached to pads and the devices are encapsulated for packaging.

REFERENCES:
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patent: 4795720 (1989-01-01), Kawanabe et al.
patent: 5017510 (1991-05-01), Welch et al.
patent: 5326709 (1994-07-01), Moon et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 8, Jan. 1978, NY, U.S., pp. 3189-3190 H. Remshardt et al., "Tolerance Trimming of Electrical Data of LSI Semiconductor Circuits".

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