Double locos for submicron isolation

Details Double locos for submicron isolation Double locos for submicron isolation

1995-10-11

1997-10-21

Fourson, George

Fishing, trapping, and vermin destroying

H01L 2176

Patent

active

056796005

ABSTRACT:
An improved LOCOS process is provided particularly for use with submicron isolation dimensions in the form of a double LOCOS process, in which double LOCOS stacks are formed upon a silicon substrate including a thin first oxide (pad oxide) layer, a thin first nitride layer, a second oxide layer and a thick second nitride layer. The stacks are optionally laterally enclosed in polysilicon spacers. A first field oxidation is then performed to grow oxide up to just below the thickness level at which defect formation commences, and sufficiently thick for the field oxide to form a continuous oxide layer with the second oxide layer. The thick second nitride layer is then removed from the stacks, and a second field oxidation is performed to reach the final field oxide thickness.

REFERENCES:
patent: 5468675 (1995-11-01), Kaigawa
patent: 5567645 (1996-10-01), Ahn et al.

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