Double level metal edge seal for a semiconductor device

Details Double level metal edge seal for a semiconductor device Double level metal edge seal for a semiconductor device

1986-04-18

1987-04-07

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 85, 427 93, 427 96, 357 52, 357 53, 357 71, H01L 2188

Patent

active

046560556

ABSTRACT:
A three part edge seal for an integrated circuit semiconductor chip is disclosed. The edge seal includes two separate layers of metal one of which overlays the other in electrical contact. One of the metal layers is in ohmic contact with a highly doped region formed in the planar surface of the semiconductor body. The two metal layers serve as an electrical conductor to distribute power to various portions of the integrated circuit contained in the chip and electrically charge the highly doped region to prevent migration of ions into the active areas of the integrated circuits.

REFERENCES:
patent: 4060827 (1977-11-01), Ono et al.
patent: 4124863 (1978-11-01), Mason
patent: 4219827 (1980-08-01), Kaiser
patent: 4364078 (1982-12-01), Smith et al.
patent: 4423548 (1984-01-01), Hulseweh

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