Double level conductor structure

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357 59, 357 91, 357 239, H01L 2702, H01L 2904, H01L 2906

Patent

active

050669958

ABSTRACT:
A double level conductive structure is provided wherein one conductor layer permits impurities to pass therethrough in a given impurity introduction steph while double conductor level portion substantially prevents such impurities from passing therethrough due to a greater combined resistance to impurity penetration.

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patent: 4873204 (1989-10-01), Wong et al.
IEDM Technical Digest, 1984, #5.3, pp. 118-120, by Chen et al.

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