Double layer spacer for antiparallel pinned layer in CIP/CPP...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C360S324100, C428S690000, C428S690000, C428S690000, C029S603140

Reexamination Certificate

active

06870711

ABSTRACT:
A pinned/pinning layer configuration of the form: AP1/coupling bilayer/AP2/AFM, suitable for use in a CIP or CPP GMR sensor, a TMR sensor or an MRAM element, is found to have improved magnetic stability, yield good values of dR/R and have high values of saturation magnetization that can be adjusted to meet the requirements of magnetic field annealing. The coupling bilayer is a layer of Ru/Rh or their alloys, which provides a wide range of coupling strengths by varying either the thickness of the Ru layer or the Rh layer.

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patent: 6153320 (2000-11-01), Parkin
patent: 6612018 (2003-09-01), Gill
patent: 6620530 (2003-09-01), Li et al.
patent: 6667901 (2003-12-01), Perner et al.
patent: 6731477 (2004-05-01), Lin et al.
“Oscillations in Exchange Coupling and Magneto—resistance in Metallic Superlattice Structures; Co/Ru, Co/Cr, and Fe/Cr,” Phys. Rev. Lett., vol. 64, No. 19, May 7, 1990, pp. 2304-2308.

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