Double layer photoresist process for well self-align and ion imp

Details Double layer photoresist process for well self-align and ion imp Double layer photoresist process for well self-align and ion imp

1986-02-10

1988-08-30

Roy, Upendra

Fishing, trapping, and vermin destroying

357 42, 437 29, 437 56, 437944, H01L 21308, H01L 21265

Patent

active

047677210

ABSTRACT:
A technique is disclosed for obtaining a self-aligned twin-well structure in a CMOS process. A double layer of two different photoresist materials is employed to obtain an overhang photoresist structure used for the p-well masking and ion implantation process. After the p-well implantation, pure aluminum is deposited over the wafer, forming a first layer over the p-well region and a second layer over the photoresist layers. A metal lift-off procedure is performed to dissolve the photoresist layers and thereby remove the second layer of metal. The first layer of aluminum remaining on the wafer forms a conjugate of the p-well pattern and serves as the n-well mask for ion implantation. The invention provides a straightforward method for achieving the self-aligned twin-well structure in CMOS processes, and is adapted to high energy ion implantation for achieving retrograde impurity profiles.

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IEEE Journal of Solid-State Circuits, vol. SC-15, No. 4, Aug. 1980, Y. Todokoro: "Double-Layer Resist Films for Submicrometer Electronbeam Lithography", pp. 508-513, See pp. 511, 512, Section III: Experiment.

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