Double heterostructure stripe geometry semiconductor laser devic

Details Double heterostructure stripe geometry semiconductor laser devic Double heterostructure stripe geometry semiconductor laser devic

1978-02-14

1978-12-19

Miller, Jr., Stanley D.

Oscillators

Molecular or particle resonant type

357 16, 357 18, H01S 319

Patent

active

RE0298662

ABSTRACT:
A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surface of the device to the vicinity of the active region. A surface semiconductor layer of an opposite conductivity type covers the entire surface of the device except for the elongated region.

REFERENCES:
patent: 3354406 (1967-11-01), Kiss
patent: 3363195 (1968-01-01), Furnange et al.
patent: 3479613 (1969-11-01), Ruprecht et al.
patent: 3495140 (1970-02-01), Cornely et al.
patent: 3522552 (1970-08-01), Wilmett
patent: 3758875 (1973-09-01), Hayashi
patent: 3780358 (1973-12-01), Thompson
patent: 3783351 (1974-01-01), Tsukada et al.

Affiliated with

Also associated with

Rating

Double heterostructure stripe geometry semiconductor laser devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double heterostructure stripe geometry semiconductor laser devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double heterostructure stripe geometry semiconductor laser devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2368107