Double heterostructure step recovery diode with internal drift f

Details Double heterostructure step recovery diode with internal drift f Double heterostructure step recovery diode with internal drift f

1991-05-31

1992-09-15

Larkins, William D.

357 58, 357 90, H01L 29163, H01L 29203, H01L 2936, H01L 2986

Patent

active

051482673

ABSTRACT:
A double heterostructure step recovery diode having a very fast step transition time and a high output voltage. A highly doped, wide bandgap p-type region; a narrow bandgap intrinsic region; and a highly doped, wide bandgap n-type region define a PIN diode structure. The intrinsic region forms heterojunctions with the p and n regions. Highly doped, narrow bandgap p and n contact regions adjoin the wide bandgap p and n regions, respectively and form heterojunctions therewith. Very thin, highly doped, narrow bandgap p and n regions are located between the intrinsic region and the wide bandgap p and n regions, respectively. Optional graded bandgap p-type and n-type regions are located between the wide and narrow bandgap p and n regions. In one embodiment the diode is embedded in an undoped wide bandgap material. In an alternate version, the intrinsic region is replaced with a lightly-doped p-type charge storage region to reduce the slow tail portion of the step recovery. An electric field, generated by a graded doping level or a graded bandgap structure, also reduces the slow tail.

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