Double-heterostructure semiconductor with mesa stripe waveguide

Details Double-heterostructure semiconductor with mesa stripe waveguide Double-heterostructure semiconductor with mesa stripe waveguide

1988-12-05

1990-08-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

049493493

ABSTRACT:
A double-heterostructure semiconductor laser is disclosed which has a semiconductive substrate of a first conductivity type made of III-V compound semiconductor material, a first semiconductive cladding layer of the first conductivity type disposed above the substrate, an active layer made of a semiconductor film provided on said cladding layer to serve as a light emission layer, and a second semiconductive cladding layer of a second conductivity type provided on the active layer to define a light waveguide channel of the laser. The second cladding layer is made of a compound semiconductor containing indium, phosphorus, and aluminum. A contact layer section is provided on the second cladding layer to cover the light waveguide channel. The contact layer is made of a compound semiconductor material containing gallium and arsenic, and has a band gap discontinuity at a boundary region of the light waveguide channel to form a barrier which serves to effectively seal current carriers in the waveguide channel, while the laser is emitting a laser light. This contact layer may also serve as a current-blocking layer.

REFERENCES:
patent: 4821278 (1989-04-01), Yang et al.
JPN. Journal of Applied Physics, vol. 21, No. 12, pp. L731-L733; Dec. 1982, T. Suzuki et al., "MOCVD-Grown Al.sub.0.5 In.sub.0.5 P-GA.sub.0.5 In.sub.0.5 P Double Heterostructure Lasers Optically Pumped at 90 K".
Appl. Phys. Lett., vol. 45, No. 9, pp. 964-966; Nov. 1984; M. Ikeda et al., "Yellow-emitting AlGalnP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition".
Appl. Phys. Lett., vol. 48, No. 2, pp. 89-91; Jan. 1986, M. Ikeda et al., "Room-Temperature Continuous-Wave Operation of an AlGalnP Mesa Stripe Laser".

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