Double heterostructure semiconductor laser

Details Double heterostructure semiconductor laser Double heterostructure semiconductor laser

1975-08-28

1977-04-05

Webster, Robert J.

Oscillators

Molecular or particle resonant type

357 16, 357 18, H01S 319

Patent

active

040165051

ABSTRACT:
A double-heterostructure injection laser can be improved to have a low threshold current. The improvement is obtained when the active region of GaAs or Ga.sub.l-y Al.sub.y As consists of several component layers wherein the central layer has the highest carrier concentrations and the layers on both sides of the central layer have lower carrier concentrations and the farther the outer layers are apart from the central layer, the lower are their carrier concentrations.
By forming the active region in this manner, the light generated in the active region is well confined in the region without undesirable leaking, resulting in a considerable lowering of the threshold current.

REFERENCES:
patent: 3456209 (1969-07-01), Diemer
patent: 3911376 (1975-10-01), Thompson

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