Patent
1985-02-14
1986-11-25
Davie, James W.
357 16, H01L 3300
Patent
active
046252231
ABSTRACT:
A double heterostructure light-emitting semi-conductor device includes a p-GaAs substrate having a first electrode formed on one surface and a current confining layer on the other surface; a confined current conduction layer; and a light-emitting layer structure formed on the current confining layer and the confined current conduction layer. A capping layer of GaAs having a second electrode is formed on the light-emitting layer structure. A light exit window layer for exiting the emitted light is constructed by a thin film of the capping layer.
REFERENCES:
patent: 4010483 (1977-03-01), Liu
patent: 4212021 (1980-07-01), Ono et al.
Speer et al., "Planar Double-Heterostructure GaAlAs LED's Packaged for Fiber Optics", IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. CHMT-3, No. 4, Dec. 1980, pp. 480-484.
Patents Abstracts of Japan, vol. 7, No. 174 (E-190) [1319], Aug. 2, 1983; & JP-A-58 80 882 (Mitsubishi Denki K.K.) 16-05-1983 *Whole document*.
Electronic Letters, vol. 15, No. 19, Sep. 13, 1979, pp. 599-600, Hitchin, Herts, GB; M. C. Amann et al.: "Small-area GaAs-GaAlAs Heterostructure Light-Emitting Diode with Improved Current Confinement", *FIGS. 1, 2; p. 599, right-hand col. lines 1-4; p. 60, left-hand col.*.
Komatsubara Tadashi
Sadamasa Tetsuo
Davie James W.
Epps Georgia Y.
Kabushiki Kaisha Toshiba
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