Double heterostructure light emitting diode

Details Double heterostructure light emitting diode Double heterostructure light emitting diode

1987-09-14

1989-08-29

Mintel, William A.

357 16, 357 90, 357 55, H01L 3300

Patent

active

048622303

ABSTRACT:
A double heterostructure light emitting diode comprises a p-active layer, and n and p-cladding layers respectively provided on the both sides of the p-active layer. The p-active layer is doped with p-impurity such that the concentration thereof is distributed therein to be higher in a region proximate to the p-n junction between said p-active and n-cladding layers. As a result, a response time is shortened and light output is increased.

REFERENCES:
patent: 3419742 (1968-12-01), Herzog
patent: 3703871 (1972-11-01), Saul
patent: 3977016 (1976-08-01), Lebailly
patent: 4183039 (1980-01-01), Aoki et al.
patent: 4608694 (1986-08-01), Partin
patent: 4670689 (1987-06-01), Suzuki
Suzuki et al., "In GaAsP/InP 1.3-.mu.m Wavelength Surface-Emitting LED's for High-Speed Short-Haul Optical Communication System", Journal of Lightwave Technology, vol. LT-3, No. 6, Dec. 1985, pp. 1217-1222.

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