Double heterostructure lasers having reduced microstress

Details Double heterostructure lasers having reduced microstress Double heterostructure lasers having reduced microstress

1975-09-22

1977-09-06

Webster, Robert J.

Oscillators

Molecular or particle resonant type

357 16, 357 18, H01S 319

Patent

active

040471233

ABSTRACT:
A conventional construction of light emissive III-V semiconductor device is modified by the inclusion in the active region of the device of not more than 5 atomic percent of a group III or group V substituent of significantly different atomic radius than that of the element for which it is substituted. The microstress field in the neighborhood of dislocation in the active region produces local modification of the concentration of the substituent causing a reduction in the magnitude of the microstress field associated with these dislocations.

REFERENCES:
patent: 3982261 (1976-09-01), Antypas
Burnham et al., Applied Physics Letters, vol. 17, No. 10, 15 Nov. 1970, pp. 455-457.
Dyment et al., Applied Physics Letters, vol. 24, No. 10, 15 May 1974, pp. 481-484.
Antypas et al., (1574), J. of the Electrochemical Society, vol. 120, No. 11, Nov. 1973, pp. 1574-1577.
Antypas et al., (416), J. of the Electrochemical Society, vol. 121, No. 3, Mar. 1974, pp. 416-418.

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