Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1991-04-17
1992-12-15
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257101, 257102, H01L 3300
Patent
active
051721953
ABSTRACT:
A light emitting device having: a first GaAlAs clad layer of a first conductivity type having a first AlAs mixed crystal ratio, the first GaAlAs clad layer serving as a first layer of the device; a GaAlAs active layer having a second AlAs mixed crystal ratio different from the first AlAs mixed crystal ratio, the second AlAs mixed crystal ratio being set to a value necessary for light emission wavelength within a range of 610 nm to 640 nm, the GaAlAs active layer serving as a second layer of the device; and a second GaAlAs clad layer of a second conductivity type having a third AlAs mixed crystal ratio different from the second AlAs mixed crystal ratio, the second GaAlAs clad layer serving as a third layer of the device, wherein the GaAlAs active layer of the first conductivity type serving as said second layer is sandwiched between the first GaAlAs clad layer of the first conductivity type serving as the first layer and the second GaAlAs clad layer of the second conductivity type serving as the third layer, to constiutute a double hetero structure. The second AlAs mixed crystal ratio is 0.4 to 0.56, while the third mixed crystal value ratio is 0.75 to 0.85.
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James Andrew J.
Kabushiki Kaisha Toshiba
Russell Daniel N.
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