Double heterojunction semiconductor laser having improved high-f

Details Double heterojunction semiconductor laser having improved high-f Double heterojunction semiconductor laser having improved high-f

1985-03-21

1987-06-30

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 319

Patent

active

046776346

ABSTRACT:
A semiconductor laser of the double heterojunction (DH) type having a current-confining buried blocking layer. According to the invention, a high-resistance region having a disturbed crystal structure is present outside and on either side of the strip-shaped active region and extends at least throughout the thickness of the blocking layer. As a result, the lateral leakage currents and the parasitic capacitances are reduced so that the laser can be used at frequencies considerably higher than 1 GHz. The high-resistance region is preferably obtained by protron bombardment. The invention is particularly advantageous in DCPBH lasers for optical communication.

REFERENCES:
patent: 4525841 (1985-06-01), Kitamura et al.

Affiliated with

Also associated with

Rating

Double heterojunction semiconductor laser having improved high-f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double heterojunction semiconductor laser having improved high-f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double heterojunction semiconductor laser having improved high-f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-452123