Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-08-09
2005-08-09
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S077000, C257S103000, C257S461000, C438S107000, C438S133000
Reexamination Certificate
active
06927422
ABSTRACT:
A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C—SiC, and hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor cladding layer selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond, and a p-type semiconductor cladding layer selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond. A Ni contact is provided for the n-type cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type cladding layer. The quantum dots have a thickness that is no greater than about 250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms.
REFERENCES:
patent: 3309553 (1967-03-01), Kroemer
patent: 4802951 (1989-02-01), Clark et al.
patent: 5130771 (1992-07-01), Burnham et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5559822 (1996-09-01), Pankove et al.
patent: 5703896 (1997-12-01), Pankove et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 6611002 (2003-08-01), Weeks et al.
patent: 2002/0122241 (2002-09-01), LoCascio et al.
patent: 2002/0123227 (2002-09-01), Winningham et al.
patent: 2004/0031978 (2004-02-01), D'Evelyn et al.
patent: 2 681 492 (1991-09-01), None
patent: 403097275 (1991-04-01), None
patent: 8-64910 (1996-03-01), None
patent: 11-243228 (1999-09-01), None
U.S. Appl. No. 09/642,135, filed Aug. 18, 2000.
Astralux, Inc.
Nelms David
Sheridan Ross LLP
Tran Long
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