Double heterojunction light emitting device possessing a dopant

Details Double heterojunction light emitting device possessing a dopant Double heterojunction light emitting device possessing a dopant

1998-05-15

2000-12-19

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

257103, 257 98, 257201, 257615, 257 97, H01L 3300

Patent

active

061630373

ABSTRACT:
An active layer is sandwiched between the n-type cladding layer and the p-type cladding layer, forming a light emitting layer forming portion. The n-type cladding layer has a carrier concentration of non-doped or less than 5.times.10.sup.17 cm.sup.-3 on a side thereof close to the active layer, and a carrier concentration of 7.times.10.sup.17 -7.times.10.sup.18 cm .sup.-3 on a side thereof remote from the active layer. With this structure, it is possible to suppress to a minimum the deterioration of crystallinity at an interface between the active layer and the n-type cladding layer as well as in the active layer. thereby providing a semiconductor light emitting device high in brightness.

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patent: 5656829 (1997-08-01), Sakaguchi et al.
patent: 5811839 (1998-09-01), Shimoyama et al.
patent: 5814838 (1998-09-01), Ohtsuka et al.

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