Double heterojunction inversion base transistor

Details Double heterojunction inversion base transistor Double heterojunction inversion base transistor

1988-03-04

1989-04-25

Edlow, Martin H.

357 16, 357 4, 357 88, H01L 2972

Patent

active

048252697

ABSTRACT:
A bipolar transistor in which the base region includes a heterostructure and a doped layer of semiconductor material with the heterostructure functioning as a two-dimensional hole gas. The doped layer is sufficiently thin to prevent occurrence of a charge-neutral region of holes. In operation the transistor can switch quickly since minority charge storage in the base region does not present a problem. The device lends itself to downscaling in size in a VLSI circuit.

REFERENCES:
patent: 4180825 (1985-12-01), Mann
patent: 4561916 (1985-12-01), Akiyama
patent: 4593305 (1986-06-01), Kurota
patent: 4617724 (1986-10-01), Yokoyama
patent: 4712121 (1987-12-01), Yokoyama
patent: 4771326 (1988-09-01), Curran

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