Double heterojunction bipolar transistor and the method of manuf

Details Double heterojunction bipolar transistor and the method of manuf Double heterojunction bipolar transistor and the method of manuf

1992-12-23

1994-11-15

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257139, 257200, H01L 2701, H01L 2900, H01L 2978

Patent

active

053650891

ABSTRACT:
A Double Heterojunction Bipolar Transistor (DHBT) and the method of fabrication therefor. First a layered wafer is prepared on a semi-insulating GaAs substrate. The bottom wafer layer is n.sup.+ GaAs, followed by n.sub.- AlGaAs, a thin layer of n AlGaAs (which form the DHBT's collector) and a base layer of p.sup.+ GaAS. A layered plug fills a trench etched in the base layer. The bottom two plug layers are AlGaAs and the top plug layer is GaAs. Next, an emitter is ion-implanted into the plug core and an extrinsic base region is ion-implanted. Finally, base, emitter and collector contacts are formed.

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