Double hetero-type semiconductor laser device

Details Double hetero-type semiconductor laser device Double hetero-type semiconductor laser device

1991-11-13

1993-03-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 13, 257 96, 372 45, 372 46, H01L 3300

Patent

active

051986868

ABSTRACT:
A semiconductor laser device having: a substrate of a first conductivity type; a first clad layer of the first conductivity type formed on the substrate; an active layer formed on the first clad, the active layer being of either one of the first conductivity type and a second conductivity type opposite to the first conductivity type; a second clad layer of the second conductivity type formed on the active layer; a current block layer of the first conductivity type formed on the second clad layer; and an ohmic layer of the second conductivity type formed on the current block layer, wherein the end portion of the ohmic layer covers the side face of the second clad layer at least to some depth, at a pair of side faces of the semiconductor laser device of a double hetero type having a crystal cleavage face at least at a pair of faces substantially perpendicular to the faces of the substrate.

REFERENCES:
patent: 4488306 (1984-12-01), Sugino et al.
patent: 4628514 (1986-12-01), Dorn et al.
patent: 4841532 (1989-06-01), Kumabe et al.
patent: 4852111 (1989-07-01), Hayakawa et al.
patent: 4949349 (1990-08-01), Ohba et al.
patent: 5023880 (1991-06-01), Suzuki et al.
patent: 5042043 (1991-08-01), Hatano et al.

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