Double hetero type epitaxial wafer with refractive indices

Details Double hetero type epitaxial wafer with refractive indices Double hetero type epitaxial wafer with refractive indices

1989-11-27

1992-04-07

Mintel, William

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 372 45, 372 46, 372 43, H01L 3300

Patent

active

051032708

ABSTRACT:
A double hetero type epitaxial wafer contains a single crystal substrate, first and second conductivity type clad layers which are opposite and are made of mixed crystal compounds of Group III-V which had an indirect transition type band structure, and an active layer made of a mixed crystal compound of Group III-V which has a direct transition type band structure and is interposed between the respective clad layers, wherein the first conductivity type clad layer has a refractive index smaller than that of the second conductivity type clad layer.

REFERENCES:
patent: 4426702 (1984-01-01), Yamashita et al.
patent: 4740976 (1988-04-01), Kajimura et al.
patent: 4902356 (1990-02-01), Noguchi et al.
patent: 4905058 (1990-02-01), Yamada et al.
patent: 4935935 (1990-06-01), Reed et al.
patent: 4941146 (1990-07-01), Kobayashi

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