Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-01-11
2005-01-11
Zarabian, Amr (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S329000, C257S341000
Reexamination Certificate
active
06841812
ABSTRACT:
The present invention is a power semiconductor switch having a monolithically integrated low-voltage lateral junction field effect transistor (LJFET) controlling a high-voltage vertical junction field effect transistor (VJFET). The low-voltage LJFET conducting channel is double-gated by p+n junctions at opposite sides of the lateral channel. A buried p-type epitaxial layer forms one of the two p+n junction gates. A p+ region created by ion implantation serves as the p+ region for the second p+n junction gate. Both gates are electrically connected by a p+ tub implantation. The vertical channel of the vertical JFET is formed by converting part of the buried p-type epitaxial layer into n+ channel via n-type ion implantation.
REFERENCES:
patent: 6107649 (2000-08-01), Zhao
patent: 6423986 (2002-07-01), Zhao
patent: 6791143 (2004-09-01), Baliga
Status and Prospects for SiC Power MOSFETs James A. Cooper, Jr., Michael R. Melloch, Ranbir Singh, Anant Agarwal, and John W. Palmour IEEE Transactions on Electron Devices, vol. 49, No. 4, Apr. 2002.
A 600 V SiC Trench JFET R.N. Gupta, H.R. Chang E. Hanna, and C. Bui Materials Science Forum, vols. 389-393 (2002), pp. 1219-1222.
Application-Oriented Unipolar Switching SiC Devices P. Friedrichs, H. Mitlehner, R. Schorner, K. Dohnke, R. Elpelt, and D. Stephani Materials Science Forum, vols. 389-393 (2002), pp. 1185-1190.
5kV 4H-SiC SEJFET with Low RonS of 69m-ohm-cm2 K. Asano, Y. Sugawara, T. Hayashi, S. Ryu, R.Singh, J. Palmour, and D. Takayama Proc. 14th Int. Symp., Power Semiconductor Devices and IC's, Piscataway, NJ, IEEE, 2002.
2kV 4H-SiC Junction FETs H. Onose, A. Watanabe, T. Someya, and Y. Kobayashi Materials Science Forum, vols. 389-393 (2002), pp. 1227-1230.
Crilly, Esq. Michael
Rose Kiesha
United Silicon Carbide, Inc.
Zarabian Amr
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