Double-gated turn-off thyristor

Details Double-gated turn-off thyristor Double-gated turn-off thyristor

1994-12-09

1997-02-25

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257139, 257147, 257155, H01L 2974, H01L 31111

Patent

active

056061838

ABSTRACT:
A semiconductor device having a thyristor structure including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type; a first MISFET capable of injecting majority carriers from the fourth semiconductor region into the second semiconductor region; and a second MISFET capable of being turned on and off independently of the first MISFET and extracting majority carriers from the third semiconductor region into the fourth semiconductor region, wherein the fourth semiconductor region is divided into the source region of the first MISFET and the source region of the second MISFET, the latter being formed in a portion isolated from the former, characterized in that the depth of the source region of the second MISFET is different from that of the drain region thereof.

REFERENCES:
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 5397905 (1995-03-01), Otsuki et al.
M. Stoisiek et al., "MOS GTO -A Turn Off Thyristor With MOS-Controlled Emitter Shorts", IEDM 85 (1985) pp. 158-161.

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