Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-12-21
2011-12-06
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S225000, C257S023000, C257S347000, C257S365000, C257S366000
Reexamination Certificate
active
08072006
ABSTRACT:
A high quality imager is constructed using a silicon-on-insulator (SOI) process with sensors fabricated in the SOI substrate and isolated by the buried oxide (BOX) from associated readout circuitry in the SOI layer. Handle windows are opened in the SOI device layer for fabrication of the sensors in the handle layer substrate and then closed prior to processing in the device layer. By keeping the buried oxide layer intact, the described technique allows for independent processing of sensors and readout circuitry so that each is optimized with regard to thermal and dopant properties without concern for degradation of the other. The process is compatible with the fabrication of readout circuitry using transistors having independent double-gates, which offer simultaneous advantages in scalability, low power and low noise. Photodiode sensors are shown with allowance for many other types of sensors. The process easily accommodates hardening against radiation.
REFERENCES:
patent: 4954895 (1990-09-01), Akimoto et al.
patent: 5873003 (1999-02-01), Inoue et al.
patent: 6127701 (2000-10-01), Disney
patent: 6380572 (2002-04-01), Pain et al.
patent: 6838301 (2005-01-01), Zheng et al.
patent: 2004/0056305 (2004-03-01), Segura et al.
patent: 2005/0001319 (2005-01-01), Hackler et al.
patent: 2001332715 (2001-11-01), None
Tanaka et al, “Ultrafast Operation of Vth—Adjusted p+-n+ Double-Gate SOI MOSFETs”, IEEE Electron Device Letters, vol. 15, No. 10, Oct. 1994.
Hackler, Sr. Douglas R.
Hayhurst Richard A.
Parke Stephen A.
American Semiconductor, Inc.
Frohwerk Robert A.
Lee Eugene
Your Intellectual Property Matters, LLC
LandOfFree
Double-gated sensor cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Double-gated sensor cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double-gated sensor cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4269741